FQD5P10 mosfet equivalent, 100v p-channel mosfet.
* -3.6 A, -100 V, RDS(on) = 1.05 (Max.)@ VGS = -10 V, ID = 1.8 A
* Low Gate Charge (Typ. 6.3 nC)
* Low Crss (Typ. 18 pF)
* 100% avalanche tested
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Features
* -3.6 A, -100 V, RDS(on) = 1.05 (Max.)@ VGS = -10 V, ID = 1.8 A
* Low Gate Charge (Typ. 6.3 nC).
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superi.
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